GaN Power Amplifier – 0.3GHz to 6GHz – 35W Output

Service Description

This gallium nitride (GaN) broadband power amplifier delivers up to 45.5 dBm (35 Watts) of output power with 38% power added efficiency across a wide bandwidth from 0.3 GHz to 6 GHz. The design features integrated DC blocking capacitors on the input and output ports, eliminating the need for external components. No external matching or inductors are required for full-band operation. Suitable for both pulsed and continuous wave applications, this amplifier is ideal for use in radar systems, wireless infrastructure, military jammers, and general-purpose RF amplification. The amplifier is housed in a compact 10-lead ceramic leaded chip carrier (LDCC) package.

Features

• High PSAT: 46 dBm
• High power gain: 20 dB
• High PAE: 38%
• Instantaneous bandwidth: 0.3 GHz to 6 GHz
• Supply voltage: VDD = 50 V at 1300 mA
• 10-lead LDCC package

Specifications

• Frequency Range = 0.3 GHz to 3 GHz.
  • Small Signal Gain: 23 – 26 dB
  • Gain Flatness: ±2 dB
  • Return Loss Input: 13 dB
  • Return Loss Output: 12 dB
  • 4 dB Compressed Power: 39 – 45 dBm
  • Saturated Output Power: 46 dBm
  • Power Gain for Psat: 20 dB
  • Power Added Efficiency: 38%
  • Total Supply Current: 1300 mA
  • Supply Voltage: 50V
• Frequency Range = 3 GHz to 6 GHz.
  • Small Signal Gain: 25 – 28 dB
  • Gain Flatness: ±2 dB
  • Return Loss Input: 10 dB
  • Return Loss Output: 7 dB
  • 4 dB Compressed Power: 39 – 45 dBm
  • Saturated Output Power: 46 dBm
  • Power Gain for Psat: 19 dB
  • Power Added Efficiency: 35%
  • Total Supply Current: 1300 mA
  • Supply Voltage: 50V

This component is not designed for surface mounting and is unsuitable for use in solder reflow processes. It should not be exposed to ambient temperatures exceeding 150°C.

Absolute Maximum Ratings

• Drain Bias Voltage (VDD): 60V DC
• Gate Bias Voltage (VGG 1): −8 V to 0 V DC
• Radio Frequency (RF) Input Power (RFIN): 35 dBm
• Continuous Power Dissipation (PDISS): (T = 85°C): 89.4 W
• Storage Temperature Range: −55°C to +150°C
• Operating Temperature Range: −40°C to +85°C
• Human Body Model (HBM) Electrostatic Discharge (ESD) Sensitivity: 375 V

Exceeding the specified absolute maximum ratings may result in permanent damage to the device. These ratings are stress limits only; operation at or beyond these conditions is not guaranteed to be functional. Continuous operation outside the recommended operating conditions may degrade long-term reliability.